Impact of gas adsorption on the stability and electronic properties of negative electron affinity GaAs nanowire photocathodes
作者： Lei Liu , Yu Diao , Sihao Xia
DOI: 10.1016/J.JCIS.2020.03.100
关键词:
摘要: The influence of CO, CO2, H2O, H2 and CH4 adsorption on the stability electronic properties negative electron affinity (NEA) GaAs nanowire surfaces activated by Cs/O Cs/NF3 are systematically investigated via first-principles. calculations indicated that nanowires with 3Cs/O more susceptible to surface contamination. After residual gas molecule adsorption, exhibit direct bandgap character, while 3Cs/NF3 inversely indirect bandgap. In addition, results in a notable increase band gap, work function surfaces. incoporation molecules also induces new electric dipole [Cs-gas] direction from Cs molecule. From perspective theoretical calculation, it is predicted through has stronger compared aspect exposure.
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sci-hub.se 参考文章(42)
Yong Zhang, Zhong-Xiang Xie, Yuan-Xiang Deng, Xia Yu, Impurity distribution and ferromagnetism in Mn-doped GaAs nanowires: A first-principle study Physics Letters A. ,vol. 379, pp. 2745- 2749 ,(2015) , 10.1016/J.PHYSLETA.2015.08.012
Xiaohua Yu, Yujie Du, Benkang Chang, Honggang Wang, Meishan Wang, The adsorption of Cs and residual gases on Ga0.5Al0.5As (0 0 1) β2 (2 × 4) surface: A first principles research Applied Surface Science. ,vol. 290, pp. 142- 147 ,(2014) , 10.1016/J.APSUSC.2013.11.016
T Saka, T Kato, T Nakanishi, S Okumi, K Togawa, H Horinaka, T Matsuyama, T Baba, Spin-polarized electron sources with GaAs–GaAsP superlattices for surface analyses Surface Science. ,vol. 454, pp. 1042- 1045 ,(2000) , 10.1016/S0039-6028(00)00096-0
Siddharth Karkare, Dimitre Dimitrov, William Schaff, Luca Cultrera, Adam Bartnik, Xianghong Liu, Eric Sawyer, Teresa Esposito, Ivan Bazarov, Monte Carlo charge transport and photoemission from negative electron affinity GaAs photocathodes Journal of Applied Physics. ,vol. 113, pp. 104904- ,(2013) , 10.1063/1.4794822
John P. Perdew, Kieron Burke, Matthias Ernzerhof, Generalized Gradient Approximation Made Simple Physical Review Letters. ,vol. 77, pp. 3865- 3868 ,(1996) , 10.1103/PHYSREVLETT.77.3865
J. S. Escher, H. Schade, Calculated energy distributions of electrons emitted from negative electron affinity GaAs: Cs–O surfaces Journal of Applied Physics. ,vol. 44, pp. 5309- 5313 ,(1973) , 10.1063/1.1662148
Jijun Zou, Benkang Chang, Zhi Yang, Jianliang Qiao, Yiping Zeng, Stability and photoemission characteristics for GaAs photocathodes in a demountable vacuum system Applied Physics Letters. ,vol. 92, pp. 172102- ,(2008) , 10.1063/1.2918444
Tatsuaki Wada, Toshiyuki Nitta, Takashi Nomura, Masahiro Miyao, Minoru Hagino, Influence of Exposure to CO, CO2and H2O on the Stability of GaAs Photocathodes Japanese Journal of Applied Physics. ,vol. 29, pp. 2087- 2091 ,(1990) , 10.1143/JJAP.29.2087
S. Pastuszka, M. Hoppe, D. Kratzmann, D. Schwalm, A. Wolf, A. S. Jaroshevich, S. N. Kosolobov, D. A. Orlov, A. S. Terekhov, Preparation and performance of transmission-mode GaAs photocathodes as sources for cold dc electron beams Journal of Applied Physics. ,vol. 88, pp. 6788- 6800 ,(2000) , 10.1063/1.1311307
Ik Su Chun, Varun B Verma, Xiuling Li, Engineered large area fabrication of ordered InGaAs-GaAs nanotube arrays MRS Proceedings. ,vol. 1057, pp. 12- 17 ,(2007) , 10.1557/PROC-1057-II05-40