作者: Ik Su Chun , Varun B Verma , Xiuling Li
DOI: 10.1557/PROC-1057-II05-40
关键词: Nanotechnology 、 Dispersion (chemistry) 、 Materials science 、 Substrate (electronics) 、 Fabrication 、 Nanotube 、 Planar 、 Layer (electronics) 、 Nanostructure 、 Semiconductor
摘要: Strain induced self-rolling semiconductor micro and nanotubes related structures represent a new class of building blocks nanotechnology. They are formed when strained planar bilayers released from the substrate by selectively removing sacrificial layer. Compared to other nanotechnology blocks, one main advantages is precise positioning capability due top down fabrication approach. In this article, we demonstrate perfectly aligned arrays InGaAs/GaAs dispersion freestanding into solution onto foreign substrates. addition, systematically investigate crystal orientation dependence rolling direction using wheel configuration. Other aspects formation process also discussed.