Photoelectron spectroscopic determination of the structure of (Cs,O) activated GaAs (110) surfaces
作者： C. Y. Su , W. E. Spicer , I. Lindau
DOI: 10.1063/1.332166
关键词: Adsorption 、 Caesium 、 Crystal structure 、 Polarization (electrochemistry) 、 X-ray photoelectron spectroscopy 、 Vacuum chamber 、 Dipole 、 Chemistry 、 Layer (electronics) 、 Analytical chemistry
摘要: p‐GaAs (110) surfaces activated to negative electron affinity (NEA) have been examined with photoelectron spectroscopy. A typical GaAs surface is found consist of both a layer oxygen bonded and (Cs+,O−2) layer. The GaAs‐O was not anticipated prior this work. GaAs‐O‐Cs dipole plus the polarization Cs+‐O−2‐Cs+ sandwich proposed explain NEA condition based on structure in identification O‐GaAs bonding explains better yield achieved by two‐step activation process compared that single‐step process. Possible optimization forming also discussed. Adsorption OH from residual gas an ultrahigh vacuum chamber identified as one degradation mechanism photocathodes.
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