EBIC STUDIES OF GETTERING IN SILICON
作者： Martin KITTLER
DOI: 10.1016/B978-0-444-88429-9.50089-6
关键词: Characterization (materials science) 、 Engineering physics 、 Silicon 、 Getter 、 Materials science 、 Forensic engineering
摘要: The paper deals with methodical aspects and applications of the EBIC technique. Among other things, characterization intrinsically gettered silicon is presented treating in particular effects gettering to materials recombination properties.
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