Depth profiling of the minority-carrier diffusion length in intrinsically gettered silicon by electron-beam-induced current

摘要: A new electron‐beam‐induced current method is proposed for the depth profiling of nonuniform minority‐carrier diffusion lengths in semiconductors. An induced scan obtained on a Schottky diode formed surface beveled sample and converted into collection efficiency profile η(z). From this distribution length L(z) deduced using direct reconstruction algorithm. To check consistency, propagation‐matrix based developed to calculate η(z) arbitrary L(z). The model underlying these measurements, its more general form, holds an extended generation includes presence depletion layer. tried both artificial data experimental profiles intrinsically gettered silicon samples. results show, particular, that trend does not, general, follow connection between charge‐collection diffusive component reverse with also discussed.