Charge collection in a Schottky diode as a mixed boundary-value problem

摘要: Abstract An analysis is given of the determination bulk diffusion lengths in semiconductors from induced current profiles that are obtained by scanning an electron beam with normal incidence on a Schottky diode. The discussion assumes carrier recombination velocity at free semiconductor surface vs = 0. In this case mixed boundary conditions problem for excess minority carriers can be converted into ones using polar coordinates, and explicit expression profile given. This compared to already known opposite ∞, establish influence number properties, such as symmetry, asymptotic decay, or low-order moments derivative. It shown evaluating variance derivative two energies length determined independently knowledge value vs.