Electron-Beam-Induced Currents in Semiconductors

摘要: The scanning electron microscope (SEM) is an extremely versatile instru­ ment capable of yielding many different kinds information from the resulting interaction beam and sample. One such produces currents in semiconductors, topic interest here. popular acronym for this subject EBIC (electron-beam­ induced current). technique can, among other things, be used to directly image recombination sites; measure transport properties as minority carrier diffusion length, lifetime, surface recombina­ tion velocity; determine junction depths shallow trap energy levels; inversion layers integrated circuits; map leakage paths microplasma sites. There exists literature, however, a lack clarity regarding interpretation basic accuracy some above measurements. Our aim article therefore twofold: clarify situation through reviewing limits applica­ bility various models, explain itself discuss examples its application, power, limitation.