Hydrogen diffusion along passivated grain boundaries in silicon ribbon

摘要: Using the electron beam induced current mode of scanning microscope, a technique has been developed to study extent hydrogen passivation and diffusion along grain boundaries in silicon ribbon grown by edge‐defined film‐fed growth process. Passivation depths x, ranging from few microns more than 200 have found. Grain boundary diffusivities 10−8–10−9 cm2/s measured. A finite width spatial distribution recombination centers found measurements surface velocity S, indicate that, for S≥2×104 cm/s, ln S∝x.