Quantitative Characterization of Semiconductor Defects by Electron Beam Induced Current
作者： C. Donolato
DOI: 10.1007/978-1-4684-5709-4_17
关键词:
摘要: In the electron beam induced current (EBIC) mode, finely focused of scanning microscope is used to inject locally excess carriers in a semiconductor. If semiconductor surface provided with rectifying contact, carrier collection will occur and give rise signal that can be produce an image specimen. EBIC imaging has been widely assess rapidly electrical activity defects; however, additional information obtained by analyzing quantitatively defect contrast. The principles applications microscopy have reviewed Hanoka Bell (1981), Leamy (1982), Holt Lesniak (1985); review articles dealing more specifically related theory published (Jakubowicz, 1987; Donolato, 1988).
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