A method of analyzing the induced current profiles obtained on a Schottky diode at normal irradiation
作者： C. Donolato
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摘要: A new method is proposed to determine the minority-carrier diffusion length of a semiconductor from induced current profiles which are obtained by scanning an electron or light beam with normal incidence on Schottky diode, The based evaluation first-order moment about origin normalized profile and should be especially useful when data at large scan distances not available.
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