Evaluation of diffusion lengths and surface recombination velocities from electron beam induced current scans

作者: C. Donolato

DOI: 10.1063/1.94139

关键词:

摘要: A new procedure is described for the determination of minority‐carrier diffusion length and surface recombination velocity from electron beam induced current (EBIC) scans on a semiconductor containing barrier perpendicular to surface. The analysis relies evaluation first moment two EBIC profiles at different energies. An application method literature data reported.

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