Investigation of minority-carrier diffusion lengths by means of the scanning electron microprobe (SEM)
作者： G. Oelgart , J. Fiddicke , R. Reulke
关键词: Cathode ray 、 Atomic physics 、 Scanning electron microscope 、 Diffusion (business) 、 Range (particle radiation) 、 Microprobe 、 Electron 、 Chemistry 、 Dissipation 、 Gaussian 、 Electronic, Optical and Magnetic Materials 、 Condensed matter physics
摘要: Using a Gaussian approximation for the depth distribution of energy dissipation function electron bombardment, beam induced barrier current (BC) is determined as position on surface perpendicular to barrier. Comparison theory and experiment dependence BC provided values diffusion length recombination velocity excess carriers. The experiments are performed in wide range lengths dopand concentration Si GaP primary energies electrons between 10 30 keV. parameters estimated compared with taken from literature.
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