作者: A. Castaldini , A. Cavallini , A. Poggi , E. Susi
DOI: 10.1016/S0921-5107(96)01716-3
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摘要: Abstract The surface and sub-surface damage induced by processing is a major concern for the Si advanced sub-micron technologies. interest in characterization techniques which allow monitoring of modifications electrical properties wafers is, therefore, growing. recombination velocity parameter more directly correlated to activity surface, and, sensitive changes electronic properties, but its measurement, up now, has not been assessed enough. We have measured two independent methods: photoelectromagnetic effect (PEM) electron beam current (EBIC) mode scanning microscope (SEM), order test reliability correlate macroscopic value obtained PEM with local values EBIC. In this work we report results on types damage: rapid thermal annealing at 750 1050 °C n-type 10 Ω cm silicon substrate SiCl 4 dry etching 5500 A thick polysilicon film grown 1 CZ silicon. both cases very good agreement between EBIC obtained. correlation variations detected data already from CV IV characteristics lifetime measurements used understand type distribution process damage.