Surface damage in processed silicon

作者: A. Castaldini , A. Cavallini , A. Poggi , E. Susi

DOI: 10.1016/S0921-5107(96)01716-3

关键词:

摘要: Abstract The surface and sub-surface damage induced by processing is a major concern for the Si advanced sub-micron technologies. interest in characterization techniques which allow monitoring of modifications electrical properties wafers is, therefore, growing. recombination velocity parameter more directly correlated to activity surface, and, sensitive changes electronic properties, but its measurement, up now, has not been assessed enough. We have measured two independent methods: photoelectromagnetic effect (PEM) electron beam current (EBIC) mode scanning microscope (SEM), order test reliability correlate macroscopic value obtained PEM with local values EBIC. In this work we report results on types damage: rapid thermal annealing at 750 1050 °C n-type 10 Ω cm silicon substrate SiCl 4 dry etching 5500 A thick polysilicon film grown 1 CZ silicon. both cases very good agreement between EBIC obtained. correlation variations detected data already from CV IV characteristics lifetime measurements used understand type distribution process damage.

参考文章(9)
Dale E. Newbury, David C. Joy, Patrick Echlin, Charles E. Fiori, Joseph I. Goldstein, SEM Microcharacterization of Semiconductors Advanced Scanning Electron Microscopy and X-Ray Microanalysis. pp. 45- 86 ,(1986) , 10.1007/978-1-4757-9027-6_2
M Biavati, I Perez‐Quintana, A Poggi, E Susi, Study of the electrical active defects induced by reactive ion etching in n-type silicon Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 13, pp. 2139- 2141 ,(1995) , 10.1116/1.588091
Stephen J. Fonash, An Overview of Dry Etching Damage and Contamination Effects Journal of The Electrochemical Society. ,vol. 137, pp. 3885- 3892 ,(1990) , 10.1149/1.2086322
A. Cavallini, B. Fraboni, D. Cavalcoli, Evaluation of diffusion length and surface recombination velocity in semiconductor devices by the method of moments Journal of Applied Physics. ,vol. 71, pp. 5964- 5968 ,(1992) , 10.1063/1.350447
Luigi Passari, Enrichetta Susi, Recombination mechanisms and doping density in silicon Journal of Applied Physics. ,vol. 54, pp. 3935- 3937 ,(1983) , 10.1063/1.332568
E. Susi, A. Poggi, M. Madrigali, Electrical properties of rapid thermal annealing induced defects in silicon Journal of The Electrochemical Society. ,vol. 142, pp. 2081- 2085 ,(1995) , 10.1149/1.2044245
A. Poggi, E. Susi, Effect of passivating oxides on the surface recombination velocity in silicon Physica Status Solidi (a). ,vol. 113, ,(1989) , 10.1002/PSSA.2211130141
Antonella Poggi, E. Susi, Surface Damage Induced by Reactive Ion Etching in n- Type Silicon Solid State Phenomena. pp. 383- 390 ,(1995) , 10.4028/WWW.SCIENTIFIC.NET/SSP.47-48.383