Cathodoluminescence from Amorphous and Nanocrystalline Nitride Thin Films Doped with Rare Earth and Transition Metals
作者： Muhammad Maqbool , Wojciech M Jadwisienczak , Martin E Kordesch , N Yamamoto , None
DOI: 10.5772/34869
关键词:
摘要: Rare earth (RE) ion luminescence has long been used in laser and optical fiber communications technology. Bulk RE doped oxides were widely color phosphors for Cathode Ray Tubes. The wide band gap (WBG) semiconductors insulators have visible emission at 300 K from ions since the reports first by Zanata (Zanatta Nunes 1998) Er silicon nitride (photoluminescence) then shortly thereafter Steckl (Steckl Birkhahn GaN. III-nitrides emerging as Light Emitting Diodes time, it was reported that intensity of improved a host. Silicon (band ≈ 1.1 eV) is not suited most emission. Glasses infra red (IR), especially Er3+ ~ 1.5 ┤m. In 1998, incorporation into crystalline host often accomplished implantation low atomic concentrations, or situ doping (again with percentages) ions. It believed quality lattice essential to luminescence. However, observed green room temperature an Er-doped film deposited reactive sputtering nitrogen. Visible estimated 10 at. % dopant concentration amorphous material. Both hosts discovered groups set motion (enduring) pursuit practical light devices using materials.
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