Stabilization of amorphous GaN by oxygen
作者： F. Budde , B. J. Ruck , S. Rubanov , J. B. Metson , A. Bittar
DOI: 10.1063/1.2014937
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摘要: We have investigated experimentally the structure of disordered GaN films. The results suggest that it is not possible to stabilize an amorphous network in stoichiometric films, and instead consists random-stacked nanocrystals some 3-nm diameter. However, incorporation 15% or more oxygen stabilizes phase, which we attribute presence nontetrahedral bonds centered on oxygen. ionic favorability heteropolar its strikingly simple constraint even-membered rings are likely causes instability a-GaN.
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sci-hub.st 参考文章(35)
JH Davies, Ar Long, Proceedings of the 26th International Conference on the Physics of Semiconductors Institute of Physics. ,(2003)
Hong Chen, Kuiying Chen, D. A. Drabold, M. E. Kordesch, Band gap engineering in amorphous AlxGa1−xN: Experiment and ab initio calculations Applied Physics Letters. ,vol. 77, pp. 1117- 1119 ,(2000) , 10.1063/1.1289496
Kuiying Chen, David A. Drabold, First principles molecular dynamics study of amorphous Al[sub x]Ga[sub 1−x]N alloys Journal of Applied Physics. ,vol. 91, pp. 9743- 9751 ,(2002) , 10.1063/1.1478132
B. J. Ruck, A. Koo, U. D. Lanke, F. Budde, S. Granville, H. J. Trodahl, A. Bittar, J. B. Metson, V. J. Kennedy, A. Markwitz, Quantitative study of molecular N 2 trapped in disordered GaN:O films Physical Review B. ,vol. 70, pp. 235202- ,(2004) , 10.1103/PHYSREVB.70.235202
S. O. Kucheyev, J. S. Williams, C. Jagadish, J. Zou, G. Li, Damage Buildup in GaN under Ion Bombardment Physical Review B. ,vol. 62, pp. 7510- 7522 ,(2000) , 10.1103/PHYSREVB.62.7510
H. Siegle, L. Eckey, A. Hoffmann, C. Thomsen, B.K. Meyer, D. Schikora, M. Hankeln, K. Lischka, Quantitative determination of hexagonal minority phase in cubic GaN using Raman spectroscopy Solid State Communications. ,vol. 96, pp. 943- 949 ,(1995) , 10.1016/0038-1098(95)00561-7
Mark C Ridgway, CJ Glover, KM Yu, GJ Foran, C Clerc, John Lundsgaard Hansen, A Nylandsted Larsen, None, Ion-dose-dependent microstructure in amorphous Ge Physical Review B. ,vol. 61, pp. 12586- 12589 ,(2000) , 10.1103/PHYSREVB.61.12586
J. Elsner, R. Jones, M. I. Heggie, P. K. Sitch, M. Haugk, Th. Frauenheim, S. Öberg, P. R. Briddon, DEEP ACCEPTORS TRAPPED AT THREADING-EDGE DISLOCATIONS IN GAN Physical Review B. ,vol. 58, pp. 12571- 12574 ,(1998) , 10.1103/PHYSREVB.58.12571
Qiliang Yan, Tushar S Jain, Juan J de Pablo, None, Density-of-states Monte Carlo simulation of a binary glass. Physical Review Letters. ,vol. 92, pp. 235701- 235701 ,(2004) , 10.1103/PHYSREVLETT.92.235701
A. Bittar, H. J. Trodahl, N. T. Kemp, A. Markwitz, Ion-assisted deposition of amorphous GaN: Raman and optical properties Applied Physics Letters. ,vol. 78, pp. 619- 621 ,(2001) , 10.1063/1.1345800