Structural study of gallium oxynitrides prepared by ammonolysis of different oxide precursors
作者： Xavier Cailleaux , María del Carmen Marco de Lucas , Odile Merdrignac-Conanec , Franck Tessier , Kazuteru Nagasaka
DOI: 10.1088/0022-3727/42/4/045408
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摘要: … Gallium oxynitrides have been prepared by ammonolysis of either NiGa2O4 ternary oxide … structure, gallium oxynitride obtained from NiGa2O4 crystallizes with an original structure that …
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Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa, Shin‐ichi Nagahama, High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes Applied Physics Letters. ,vol. 67, pp. 1868- 1870 ,(1995) , 10.1063/1.114359
Wolfgang Gruner, Birgit Wollein, Walter Lengauer, ɛ-TaN as a Reference Material for the Determination of High Nitrogen Contents Mikrochimica Acta. ,vol. 146, pp. 1- 6 ,(2004) , 10.1007/S00604-003-0169-Z
S. Nozaki, H. Feick, E. R. Weber, M. Micovic, C. Nguyen, Compression of the dc drain current by electron trapping in AlGaN/GaN modulation doped field-effect transistors Applied Physics Letters. ,vol. 78, pp. 2896- 2898 ,(2001) , 10.1063/1.1367274
H. Siegle, G. Kaczmarczyk, L. Filippidis, A. P. Litvinchuk, A. Hoffmann, C. Thomsen, Zone-boundary phonons in hexagonal and cubic GaN Physical Review B. ,vol. 55, pp. 7000- 7004 ,(1997) , 10.1103/PHYSREVB.55.7000
M. Kerlau, O. Merdrignac-Conanec, P. Reichel, N. Bârsan, U. Weimar, Preparation and characterization of gallium (oxy)nitride powders: Preliminary investigation as new gas sensor materials Sensors and Actuators B-chemical. ,vol. 115, pp. 4- 11 ,(2006) , 10.1016/J.SNB.2005.07.068
M.C. Marco de Lucas, F. Fabreguette, M. Linsavanh, L. Imhoff, O. Heintz, C. Josse-Courty, M.T. Mesnier, V. Potin, S. Bourgeois, M. Sacilotti, Structure and properties of GaNxOy films grown by nitridation of GaAs (1 0 0) substrates Journal of Crystal Growth. ,vol. 261, pp. 324- 329 ,(2004) , 10.1016/J.JCRYSGRO.2003.11.022
Maximilian Fleischer, Hans Meixner, Oxygen sensing with long-term stable Ga2O3 thin films Sensors and Actuators B-chemical. ,vol. 5, pp. 115- 119 ,(1991) , 10.1016/0925-4005(91)80230-H
A. Koo, F. Budde, B. J. Ruck, H. J. Trodahl, A. Bittar, A. Preston, A. Zeinert, Photoconductivity in nanocrystalline GaN and amorphous GaON Journal of Applied Physics. ,vol. 99, pp. 034312- ,(2006) , 10.1063/1.2170400
C Vinegoni, M Cazzanelli, A Trivelli, G Mariotto, J Castro, J.G Lunney, J Levy, Morphological and optical characterization of GaN prepared by pulsed laser deposition Surface and Coatings Technology. ,vol. 124, pp. 272- 277 ,(2000) , 10.1016/S0257-8972(99)00657-X
F. Budde, B. J. Ruck, S. Rubanov, J. B. Metson, A. Bittar, Bernard Bonnet, M. J. Ariza, D. J. Jones, G. V. M. Williams, S. Granville, P. Munroe, H. J. Trodahl, Annette Koo, Stabilization of amorphous GaN by oxygen Journal of Applied Physics. ,vol. 98, pp. 063514- ,(2005) , 10.1063/1.2014937