Structural and optical properties of GaN-based nanocrystalline thin films
作者： C.E.A. Grigorescu , L. Tortet , O. Monnereau , L. Argeme , H.J. Trodahl
DOI: 10.1016/J.TSF.2007.07.201
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摘要: Abstract We study the effect of annealing on structure, morphology and optical properties nanocrystalline films GaN, GaN:O GaN:Mn prepared by ion assisted deposition silicon, quartz glassy carbon substrates. Blisters holes having diameters proportional with thickness film were observed in deposited silicon carbon. The Mn excess turns through into x N y islands. degree short- intermediate-range order was investigated micro-Raman spectroscopy, extending to about 3 nm for gallium oxynitride annealed 973 K more than 10 nm GaN samples. A diminished oxygen content following procedures samples is noticed from reduced intensity mode at 1000 cm − 1 Raman spectra. This observation supported X-ray photoemission spectroscopy measurements. presence concentrations above 15at.% leads an abrupt nanocrystalline–amorphous transition.
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