Raman study of Mg, Si, O, and N implanted GaN
作者： M. Katsikini , K. Papagelis , E. C. Paloura , S. Ves
DOI: 10.1063/1.1606521
关键词:
摘要: … Finally, in MOVPE grown Mg-doped GaN samples26–28 a peak that appears close to P3 , which is observed in our spectra, is attributed to LVM of the Mg atoms that substitute Ga. …
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