Enhanced ultraviolet GaN photo-detector response on Si(111) via engineered oxide buffers with embedded Y2O3/Si distributed Bragg reflectors
作者： A. Szyszka , L. Lupina , G. Lupina , M. Mazur , M. A. Schubert
DOI: 10.1063/1.4861000
关键词:
摘要: Based on a virtual GaN substrate approach Si(111) by step graded double oxide (Sc2O3/Y2O3) buffer, we report “proof of principle” study the enhanced photo-response ultraviolet photo-detectors due to embedded DBRs (distributed Bragg reflectors). Embedded benefit from an order magnitude lower number superlattice sequences in contrast III- nitride systems high refractive index between high-k Y2O3 and low-k Si. The UV (ultraviolet) reflectance efficiency designed DBR is proven considerable increase range comparison reference layers without DBRs.
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