Electronic transport and Schottky barrier heights of Pt/n-type GaN Schottky diodes in the extrinsic region
作者： Yow-Jon Lin
DOI: 10.1063/1.3158058
关键词: Schottky barrier 、 Condensed matter physics 、 Fermi level 、 Quantum tunnelling 、 Schottky diode 、 Wide-bandgap semiconductor 、 Field electron emission 、 Schottky effect 、 Materials science 、 Thermionic emission
摘要: The current-voltage characteristics of n-type GaN Schottky diodes have been measured in the extrinsic region (that is, temperature range 100–300 K). effective density states conduction band decreases with decreasing and is close to electron concentration at 100 K, leading a reduction energy difference between minimum Fermi level an increase probability tunneling. Therefore, changes tunneling low are responsible for decrease barrier height ideality factor on basis thermionic emission model. mechanism forward current flow has clearly established this study, (thermionic field emission) interpretation I-V 300 K (100
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