Suppression of crack generation in AlGaN/GaN distributed Bragg reflectors grown by MOVPE
作者： M. Abid , Y. El Gmili , G. Patriarche , K. Pantzas , D. Troadec
DOI: 10.1016/J.JCRYSGRO.2012.09.061
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摘要: Abstract AlGaN/GaN distributed Bragg reflectors have been grown on GaN templates by Metal Organic Vapor Phase Epitaxy (MOVPE). To overcome the problem of crack generation and achieve high reflectivity with an optimum number periods a simple approach has investigated. Using this approach, coherently strained 20-pair Al 0.27 Ga 0.73 N/GaN (42 nm/36 nm) DBR designed grown. No cracks were observed over 2” wafer. Around 90% at 384 nm stop-bandwidth 18 nm was obtained having good crystalline quality abrupt flat interfaces.
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