The preparation of different pairs near-ultraviolet AlGaN/GaN DBRs with AlN interlayer
作者： Pengchong Li , Xu Han , Long Yan , Gaoqiang Deng , Mingzhe Liu
DOI: 10.1016/J.MSSP.2018.02.010
关键词:
摘要: Abstract In this paper, near-ultraviolet AlGaN/GaN distributed Bragg reflectors (DBRs) were prepared on GaN/sapphire templates by metal organic chemical vapor deposition. A single low-temperature AlN interlayer was adopted to prevent the formation of cracks in DBRs. Moreover, different pairs DBRs with grown investigate stress distribution through epilayer, surface morphology evolution and variation reflectivity spectra. The in-situ monitoring shows a compressive-to-tensile transition increase pairs. optical microscope atomic force images show that induces appearance trenches gradually coalesce when grow. Meanwhile, experimental spectra get closer simulated results. Finally, we obtain smooth-surface 25-pair Al.32Ga.68N/GaN reflectance 94% at 390 nm 16 nm stopband bandwidth. preparation high-quality lays foundation for future development high efficiency resonant cavity UV LEDs.
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