Crack-free GaN∕AlN distributed Bragg reflectors incorporated with GaN∕AlN superlattices grown by metalorganic chemical vapor deposition
作者： GS Huang , Tien-Chang Lu , HH Yao , Hao-Chung Kuo , SC Wang
DOI: 10.1063/1.2172007
关键词:
摘要: A crack-free GaN∕AlN distributed Bragg reflector (DBR) incorporated with superlattice (SL) layers was grown on a c-plane sapphire substrate by metalorganic chemical vapor deposition. Three sets of half-wave consisting 5.5 periods SL and GaN layer were inserted in every five pairs the 20 pair DBR structure to suppress crack generation. The DBRs insertion showed no observable cracks achieved high peak reflectivity 97% at 399nm stop band width 14nm. Based x-ray analysis, reduction in-plane tensile stress could be responsible for suppression formation achievement reflectivity.
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