High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by molecular-beam epitaxy
作者： H. M. Ng , T. D. Moustakas , S. N. G. Chu
DOI: 10.1063/1.126483
关键词: Optoelectronics 、 Optics 、 Electron cyclotron resonance 、 Transmission electron microscopy 、 Distributed Bragg reflector laser 、 Epitaxy 、 Wavelength 、 Semiconductor laser theory 、 Molecular beam epitaxy 、 Materials science 、 Sapphire
摘要: A number of distributed Bragg reflectors (DBRs) based on AlN/GaN quarterwave layers have been grown (0001) sapphire by electron cyclotron resonance plasma-assisted molecular-beam epitaxy. The periods for the DBRs ranges from 20.5 to 25.5 and thickness were chosen such that peak reflectance occurs near ultraviolet green wavelength regions. Peak values between 97% 99% obtained these DBRs. best sample has a up centered at 467 nm with bandwidth 45 nm. experimental data this compared simulations using transmission matrix method show excellent agreement respect reflectance, high locations sidelobes. uniform periodicity bilayers confirmed cross-section microscopy. network cracks was observed in some samples a...
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