AlN/AlGaN Bragg-Reflectors for UV Spectral Range Grown by Molecular Beam Epitaxy on Si (111)

摘要: Quarter-wave distributed Bragg reflectors (DBRs) consisting of AlN and AlxGa1-xN (x=0.25±3%) stacked layers designed for the UV spectral region have been grown on silicon substrates by molecular beam epitaxy. Transmission electron microscopy, Rutherford Back-Scattering photoluminescence performed to assess structural quality composition DBRs. High reflectance values (91%) are obtained, a relatively rather small number periods (15), because larger refractive index ratio between AlGaN compared traditional AlGaN/GaN The experimental data were with calculations show excellent agreement respect peak width.