Influence of substrate temperature on damage buildup and removal of ion implanted gallium nitride
作者： C Liu , A Wenzel , K Volz , B Rauschenbach
DOI: 10.1016/S0168-583X(98)00691-0
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摘要: Abstract Ca + and Mg ions were homogeneously implanted in GaN a dose range between 5 × 10 12 7.3 × 10 16 cm −2 at variety of substrate temperatures from liquid nitrogen temperature to 500°C. The implantation energies 180 keV for 90 implantation, respectively. structural properties the film before after rapid thermal annealing (RTA) 1150°C flowing N 2 studied by Rutherford backscattering/channeling (RBS/C), X-ray diffraction (XRD), cross-sectional transmission electron microscopy. damage buildup removal was quantitatively assessed. Significant decomposition has been observed during RTA under even though very short time 15 s. Lattice expansion due doping found its dependence on ion determined.
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