Fe ion implantation in GaN: Damage, annealing, and lattice site location
作者： C. Liu , E. Alves , A. D. Sequeira , N. Franco , M. F. da Silva
DOI: 10.1063/1.1377606
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摘要: In this article we report the damage and annealing behavior as well lattice site location of Fe atoms in GaN. The ions were homogeneously implanted GaN films with an energy 150 keV at room temperature. A two-step (650 °C 15 min then 1000 °C 2 min) was performed to remove implantation-induced drive dopants into site. structure before after implantation each stage characterized by Rutherford backscattering/channeling combined particle induced x-ray emission high resolution diffraction. Fe+ exhibits expanded lattice. After annealing, distortion does not fully recover. Angular scans along both [0001] [1011] directions show that occupy Ga case low dose annealing. However, for GaN, about 75% substitutes ...
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