Activation kinetics of implanted Si+ in GaN and application to fabricating lateral schottky diodes
作者： Y. Irokawa , Jihyun Kim , F. Ren , K. H. Baik , B. P. Gila
DOI: 10.1063/1.1634382
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摘要: The electrical activation characteristics of implanted Si+ in GaN were investigated as a function annealing temperature (1000 °C–1200 °C). maximum percentage for an ion dose 2.5×1014 cm−2 was ∼30% with apparent energy 1.65±0.15 eV obtained from the dependence saturated carrier density. Lateral Schottky diodes fabricated on this material showed forward ideality factors ∼2 and coefficient −0.15 V K−1 their reverse breakdown voltage. These results show feasibility creating n+ tubs p-GaN such are needed sources minority carriers to achieve inversion metal-oxide-semiconductor field-effect transistors.
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