Si diffusion in p-GaN

摘要: The characteristics of p-type Mg-doped GaN films diffused with Si are studied. N-type conductivity is achieved, and the carrier mobility 90–150 cm2 V−1 s−1, higher than that p-GaN but less epitaxially grown n-GaN. Mg acceptor states could become deep compensating defects, compensation ratio NA/ND 0.3, 0.45, 0.6, 0.75 for 800, 900, 1000, 1100 °C GaN, respectively. transport may be dominated by electron hopping through these centers or diffusion. results temperature-dependent concentration indicate thermal annealing induce defects at surface, leading to an additional activation energy Ed∼10 meV in 200–500 K region GaN.