Implantation temperature dependence of Si activation in AlGaN
作者： Y. Irokawa , O. Ishiguro , T. Kachi , S. J. Pearton , F. Ren
DOI: 10.1063/1.2200283
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摘要: Si+ ion implantation at a total dose of 1.0×1015cm−2 and multiple energies in the range 30–190keV into Al0.13Ga0.87N layers on sapphire substrates for n-type doping was carried out substrate temperatures ranging from −196to700°C, followed by annealing 1150–1400°C 5min. The activation efficiency fixed temperature (1250°C) highest (∼50%) room degraded significantly elevated implantation. effective Si donor ionization energy decreased with increasing temperature, which may be related to Mott transition that creates degenerate as percentage increased. minimum sheet resistance obtained ∼100Ω∕sq after implants 1350–1400°C.
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