Process for producing semiconductor device using optical absorption layer
作者： Yuki Niiyama , Seikoh Yoshida , Takehiko Nomura , Hiroshi Kambayashi
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摘要: An optical absorption layer comprised of a substance having band gap energy smaller than that GaN is formed on an implanted region in pGaN as ground layer. There performed annealing step from upper surface substrate with predetermined light such infrared light, red or the like, which has The coefficient larger Accordingly, it possible to selectively perform heat treatment directly under vicinity thereof (the region).
lens.org 参考文章(7)
James A. Fellows, Y. K. Yeo, R. L. Hengehold, D. K. Johnstone, Electrical activation studies of GaN implanted with Si from low to high dose Applied Physics Letters. ,vol. 80, pp. 1930- 1932 ,(2002) , 10.1063/1.1458694
S. Matsunaga, S. Yoshida, T. Kawaji, T. Inada, Silicon implantation in epitaxial GaN layers: Encapsulant annealing and electrical properties Journal of Applied Physics. ,vol. 95, pp. 2461- 2466 ,(2004) , 10.1063/1.1644896
Y. Irokawa, O. Ishiguro, T. Kachi, S. J. Pearton, F. Ren, Implantation temperature dependence of Si activation in AlGaN Applied Physics Letters. ,vol. 88, pp. 182106- ,(2006) , 10.1063/1.2200283
Takayuki Ito, Method of fabrication of silicon-gate MIS transistor ,(2004)
Toshiro Futagi, Takahiro Matsumoto, Hidenori Mimura, Light emitting element with employment of porous silicon and optical device utilizing light emitting element ,(1993)
Jene A. Golovchenko, Thirumalai N. C. Venkatesan, Annealing of uncapped compound semiconductor materials by pulsed energy deposition ,(1977)
Yoshida Kiyoteru, HETEROJUNCTION NITRIDE SEMICONDUCTOR DEVICE ,(2000)