Channeling study of lattice disorder and gold implants in gallium nitride
作者： W. Jiang , W.J. Weber , S. Thevuthasan , V. Shutthanandan
DOI: 10.1016/S0168-583X(02)00601-8
关键词: Annealing (metallurgy) 、 Analytical chemistry 、 Irradiation 、 Ion 、 Lattice (order) 、 Ion implantation 、 Lower threshold 、 Materials science 、 Crystallography 、 Gallium nitride
摘要: Abstract Irradiation experiments have been performed 60° off normal for a gallium nitride (GaN) single-crystal film at 300 K using 3 MeV Au3+ ions over fluences ranging from 0.88 to 86.2 ions/nm2. The accumulation of disorder on both the Ga and N sublattices has simultaneously investigated 3.8 He+ non-Rutherford backscattering spectrometry (non-RBS) along 〈0 0 1〉 〈1 1 axial channeling directions. accumulated damage peak increases with dose below 10 dpa saturates relative level ∼0.7 between 60 dpa. Complete amorphization starts surface grows into regime. A higher rate disordering sublattice is observed low levels, which suggests lower threshold displacement energy in GaN. Isochronal annealing (20 min) temperatures up 1000 used follow thermal response Au implants. Some defect recovery occurs intermediate levels. fraction occupancy lattice site as-implanted GaN, substitutional implanted increasing temperature.
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