Amorphization processes in Au ion irradiated GaN at 150-300 K

摘要: Abstract Epitaxial single-crystal gallium nitride (GaN) films on sapphire were irradiated at temperatures between 150 and 300 K using 1.0 MeV Au 2+ ions over a range of fluences. The accumulation disorder the Ga sublattice has been investigated based 2.0 He + RBS along 〈0 0 0 1〉-axial channeling direction. In general, degree in GaN increases low doses saturates intermediate doses; higher doses, rapid amorphization process occurs as result ingrowth surface defects. Results from this study indicate that there may be dynamic recovery stage 250 K. High-resolution TEM studies show microstructure saturation contains dense network planar defects (basal-plane dislocation loops stacking faults), while more highly disordered regime includes amorphous domains small crystalline zones are randomly oriented.