Defect accumulation during channeled erbium implantation into GaN

摘要: Gallium nitride films epitaxially grown on sapphire, were irradiated at room temperature with 80keVEr+166 or 170keVEr2+166 ions to fluences ranging from 1×1013cm−2 1×1015cm−2. The defects induced by ion implantation (as a result of the nuclear energy transfer) generate perpendicular elastic strain in hexagonal GaN lattice. accumulation lattice damage and deformation investigated for Er impinging along GaN⟨0001⟩ axis, i.e., channeled implantation, compared random conventional geometry which beam is tilted 10° off c axis. For this purpose, Rutherford backscattering channeling spectrometry high-resolution x-ray diffraction used. defect concentration maximum exhibit same increasing trend fluence. Three regimes can be distinguished both geometries, low (corresponding value below 1 displacement per atom case implant...