Searching for room temperature ferromagnetism in transition metal implanted ZnO and GaN

摘要: Significant progress in the field of wide-gap dilute magnetic semiconductors (DMS) depends on discovery a material system which not only shows high-temperature ferromagnetism but is also simple to prepare and thus easy reproduce. In this context, ion implantation an attractive doping method, being both relatively highly reproducible. Here, we report search for ZnO GaN implanted with Mn, Fe, Co, prepared under wide range post-processing conditions. We focused low concentration regime (∼0.3−4%) order avoid phase segregation applied strict experimental procedures ferromagnetic contamination. Despite materials, conditions, none DMS systems showed room-temperature ferromagnetism. These results support view that transition-metal moments do ferromagnetically GaN.