Defect clustering in GaN irradiated with O+ ions
作者： Chong M Wang , Weilin Jiang , William J Weber , Larry E Thomas
关键词: Irradiation 、 Microstructure 、 Dislocation 、 Materials science 、 Lattice (order) 、 Crystallography 、 Stacking 、 Ion 、 Transmission electron microscopy 、 Crystallographic defect
摘要: Transmission electron microscopy (TEM) was used to study microstructures formed in GaN irradiated with 600-keV O+ ions at room temperature. Three types of defect clusters were identified the GaN: (i) basal-plane stacking faults dimensions ranging from 5 30 nm, (ii) pyramidal dislocation loops, and (iii) local regions highly disordered material. High-resolution TEM imaging clearly revealed that one type corresponded insertion extra Ga–N basal plane otherwise perfect lattice. The interpretation these results indicated interstitials both Ga N preferentially condensed on form a new layer under irradiation conditions. formation extended defects their interactions point produced during contributed dramatic increase dynamic recovery
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