Annealing study of ion implanted GaN
作者： C. Liu , A. Wenzel , J.W. Gerlach , X.F. Fan , B. Rauschenbach
DOI: 10.1016/S0257-8972(00)00596-X
关键词: Materials science 、 Annealing (metallurgy) 、 Ion 、 Stoichiometry 、 Analytical chemistry 、 Acceptor 、 Rapid thermal annealing 、 Doping 、 Dopant 、 Auger electron spectroscopy
摘要: Abstract Ca is a potential shallow acceptor in GaN and was used for p-type doping this study. Ca+ implantation with an energy of 180 keV carried out dose range between 5×1013 7.3×1016 cm−2 at room temperature. After implantation, rapid thermal annealing 950–1150°C 15–60 s flowing N2 performed to remove damage activate the dopants. The implantation-induced damage, surface morphology stoichiometry implanted film before after were studied by Rutherford backscattering/channeling, atomic force microscopy Auger electron spectroscopy, respectively. dependence build-up removal on ion temperature quantitatively analyzed. duration 30 1150°C has been shown be best time. Surface degeneration observed.
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sci-hub.se 参考文章(14)
Leonard C. Feldman, Materials analysis by ion channeling ,(1982)
Shuji Nakamura, Gerhard Fasol, The Blue Laser Diode: GaN based Light Emitters and Lasers ,(1997)
C Liu, A Wenzel, K Volz, B Rauschenbach, Influence of substrate temperature on damage buildup and removal of ion implanted gallium nitride Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms. ,vol. 148, pp. 396- 400 ,(1999) , 10.1016/S0168-583X(98)00691-0
L. T. Romano, B. S. Krusor, R. Singh, T. D. Moustakas, Structure of GaN films grown by molecular beam epitaxy on (0001) sapphire Journal of Electronic Materials. ,vol. 26, pp. 285- 289 ,(1997) , 10.1007/S11664-997-0165-X
J.C. Zolper, Ion implantation in group III-nitride semiconductors: a tool for doping and defect studies Journal of Crystal Growth. ,vol. 178, pp. 157- 167 ,(1997) , 10.1016/S0022-0248(97)00076-6
C. Liu, B. Mensching, M. Zeitler, K. Volz, B. Rauschenbach, Ion implantation in GaN at liquid-nitrogen temperature: Structural characteristics and amorphization Physical Review B. ,vol. 57, pp. 2530- 2535 ,(1998) , 10.1103/PHYSREVB.57.2530
S. J. Pearton, C. B. Vartuli, J. C. Zolper, C. Yuan, R. A. Stall, Ion implantation doping and isolation of GaN Applied Physics Letters. ,vol. 67, pp. 1435- 1437 ,(1995) , 10.1063/1.114518
B‐C. Chung, M. Gershenzon, The influence of oxygen on the electrical and optical properties of GaN crystals grown by metalorganic vapor phase epitaxy Journal of Applied Physics. ,vol. 72, pp. 651- 659 ,(1992) , 10.1063/1.351848
M. Asif Khan, A. Bhattarai, J. N. Kuznia, D. T. Olson, High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction Applied Physics Letters. ,vol. 63, pp. 1214- 1215 ,(1993) , 10.1063/1.109775
S.C. Binari, L.B. Rowland, G. Kelner, D.K. Gaskill, K. Doverspike, W. Kruppa, Microwave performance of GaN MESFETs Electronics Letters. ,vol. 30, pp. 1248- 1249 ,(1994) , 10.1049/EL:19940833