Structural evolution of GaN layers grown on (0 0 0 1) sapphire by hydride vapor phase epitaxy
作者： F.Y. Meng , I. Han , H. McFelea , E. Lindow , R. Bertram
DOI: 10.1016/J.JCRYSGRO.2011.05.020
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摘要: Abstract GaN was grown directly on (0 0 0 1) sapphire by a two-step process using hydride vapor phase epitaxy (HVPE). Nucleation layers deposited at ∼450–500 °C consisted of localized epitaxial wurtzite nano-crystals. In between and above the nano-crystals were randomly oriented islands various sizes shapes formed, after annealing ∼900 1000 °C, through decomposition–redeposition process. Preferential growth occurred that had an relationship with during subsequent high-temperature overgrowth. Threading dislocations observed in isolated formed annealing.
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sci-hub.se 参考文章(30)
Rachel A. Oliver, Menno J. Kappers, Colin J. Humphreys, Insights into the origin of threading dislocations in GaN∕Al2O3 from atomic force microscopy Applied Physics Letters. ,vol. 89, pp. 011914- ,(2006) , 10.1063/1.2219747
P Ruterana, P Vermaut, V Potin, G Nouet, A Botchkarev, A Salvador, H Morkoç, The structure of GaN layers grown on SiC and sapphire by molecular beam epitaxy Materials Science and Engineering B-advanced Functional Solid-state Materials. ,vol. 50, pp. 72- 75 ,(1997) , 10.1016/S0921-5107(97)00170-0
F.Y. Meng, M. Rao, N. Newman, R. Carpenter, S. Mahajan, Stacking faults in quaternary InxAlyGa1-x-yN layers Acta Materialia. ,vol. 56, pp. 4036- 4045 ,(2008) , 10.1016/J.ACTAMAT.2008.04.026
C.E.C. Dam, A.P. Grzegorczyk, P.R. Hageman, P.K. Larsen, Method for HVPE growth of thick crack-free GaN layers Journal of Crystal Growth. ,vol. 290, pp. 473- 478 ,(2006) , 10.1016/J.JCRYSGRO.2006.01.041
D.D. Koleske, M.E. Coltrin, K.C. Cross, C.C. Mitchell, A.A. Allerman, Understanding GaN nucleation layer evolution on sapphire. Journal of Crystal Growth. ,vol. 273, pp. 86- 99 ,(2004) , 10.1016/J.JCRYSGRO.2004.08.126
P. R. Tavernier, E. V. Etzkorn, Y. Wang, D. R. Clarke, Two-step growth of high-quality GaN by hydride vapor-phase epitaxy Applied Physics Letters. ,vol. 77, pp. 1804- 1806 ,(2000) , 10.1063/1.1311600
T. Detchprohm, K. Hiramatsu, H. Amano, I. Akasaki, Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer Applied Physics Letters. ,vol. 61, pp. 2688- 2690 ,(1992) , 10.1063/1.108110
A. Munkholm, C. Thompson, C. M. Foster, J. A. Eastman, O. Auciello, G. B. Stephenson, P. Fini, S. P. DenBaars, J. S. Speck, Determination of the cubic to hexagonal fraction in GaN nucleation layers using grazing incidence x-ray scattering Applied Physics Letters. ,vol. 72, pp. 2972- 2974 ,(1998) , 10.1063/1.121511
V. Narayanan, K. Lorenz, Wook Kim, S. Mahajan, Origins of threading dislocations in GaN epitaxial layers grown on sapphire by metalorganic chemical vapor deposition Applied Physics Letters. ,vol. 78, pp. 1544- 1546 ,(2001) , 10.1063/1.1352699
F. Budde, B. J. Ruck, S. Rubanov, J. B. Metson, A. Bittar, Bernard Bonnet, M. J. Ariza, D. J. Jones, G. V. M. Williams, S. Granville, P. Munroe, H. J. Trodahl, Annette Koo, Stabilization of amorphous GaN by oxygen Journal of Applied Physics. ,vol. 98, pp. 063514- ,(2005) , 10.1063/1.2014937