EXTENDED X-RAY ABSORPTION FINE STRUCTURE STUDY OF ALXGA(1-X)N FILMS

摘要: Extended x-ray absorption fine structure above the Ga–K edge has been used to study local of AlxGa1−xN films grown by metal organic chemical vapor deposition. With increasing Al content, x, Ga–N bond length decreases, but much less than average length. On other hand, x dependence Ga–Ga and Ga–Al distances does follow variation cation–cation distance. We conclude that angle distortions accommodate differences between Al–N lengths.