Properties of AlxGa1−xN films prepared by reactive molecular beam epitaxy

摘要: Single‐crystal films of the solid solution AlxGa1−xN entire composition range have been fabricated on sapphire and silicon substrates by reactive molecular beam epitaxy (MBE) at 700 °C. The properties studied reflection high energy electron diffraction technique, x‐ray diffraction, electrical optical measurements. lattice constant film is not a linear function composition, fundamental absorption edge also shows nonlinear dependence composition. narrow intense peak cathodoluminescence concerned with band to or shallow impurity transition, varies from 3.4 6 eV which suggests feasibility grown MBE for devices in ultraviolet spectral region.