Growth of Al x Ga 1−x N epitaxial thin film on sapphire substrate by plasma assisted metal organic chemical vapor deposition (PA-MOCVD)
作者： Fitri. S. Arsyad , P. Arifin , M. Barmawi , M. Budiman , Sukirno
DOI: 10.1109/SMELEC.2010.5549448
关键词: Sputtering 、 Thin film 、 Materials science 、 Sapphire 、 Analytical chemistry 、 Chemical vapor deposition 、 Epitaxy 、 X-ray crystallography 、 Single crystal 、 Metalorganic vapour phase epitaxy
摘要: This paper reported the study of growth Al x Ga 1−x N thin film on a-plane sapphire substrate using plasma assisted metal organic chemical vapor deposition (PA-MOCVD). We have successfully content AlGaN alloys and investigated influence TMA/TMAl+TMGa flow rate ratio to their crystal structure surface morphology. From S EM image XRD measurement, films grown with 20% single orientation, homogeneous smoother ED X microanalysis results, all high content. The 20%, 30%, 40% is about = 0.5, 0.6, 0.65, respectively at temperature 700°C.
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