Atomistic origins of light-induced defects in a-Si.
作者： P. A. Fedders , Y. Fu , D. A. Drabold
DOI: 10.1103/PHYSREVLETT.68.1888
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摘要: We present an atomistic model of light-induced defects (the Staebler-Wronski effect). The is based in part on our observations molecular-dynamics simulations with ab initio code and requires a change the charge well-localized state gap, such as dangling bond, to nucleate defect. are formed at weak-bond sites network following rearrangement caused by localized
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