Physical properties of electrically conductive Sb-doped SnO2 transparent electrodes by thermal annealing dependent structural changes for photovoltaic applications

作者: JW Leem , JS Yu , None

DOI: 10.1016/J.MSEB.2011.06.015

关键词: Scanning electron microscopeRefractive indexElectrodeAnnealing (metallurgy)Tin oxideOpticsElectrical resistivity and conductivityDopingOptoelectronicsCrystallinityMaterials science

摘要: Abstract We have investigated the optical and electrical characteristics of antimony (Sb)-doped tin oxide (SnO 2 ) films with modified structures by thermal annealing as a transparent conductive electrode. The structural properties were analyzed from relative void % spectroscopic ellipsometry well scanning electron microscopy images X-ray diffraction patterns. As temperature was raised, Sb-doped SnO exhibited slightly enhanced crystallinity increase grain size 17.1 nm at 500 °C to 34.3 nm 700 °C. Furthermore, refractive index extinction coefficient gradually decreased due in within film during annealing. resistivity 8.2 × 10 −3  Ω cm 500 °C, but it increased rapidly After annealing, transmittance significantly increased. For photovoltaic applications, photonic flux density figure merit over entire solar spectrum obtained, indicating highest values 5.4 × 10 14  cm −2  s −1  nm 1.85 eV after 700 °C 340.1 μA cm  Ω respectively.

参考文章(32)
H Kim, A Pique, Transparent conducting Sb-doped SnO2 thin films grown by pulsed-laser deposition Applied Physics Letters. ,vol. 84, pp. 218- 220 ,(2004) , 10.1063/1.1639515
Jong Kyu Kim, Thomas Gessmann, E. Fred Schubert, J.-Q. Xi, Hong Luo, Jaehee Cho, Cheolsoo Sone, Yongjo Park, GaInN light-emitting diode with conductive omnidirectional reflector having a low-refractive-index indium-tin oxide layer Applied Physics Letters. ,vol. 88, pp. 013501- ,(2006) , 10.1063/1.2159097
Kenji Goto, Takuya Kawashima, Nobuo Tanabe, Heat-resisting TCO films for PV cells Solar Energy Materials and Solar Cells. ,vol. 90, pp. 3251- 3260 ,(2006) , 10.1016/J.SOLMAT.2006.06.048
Xiudi Xiao, Guoping Dong, Jianda Shao, Hongbo He, Zhengxiu Fan, Optical and electrical properties of SnO2:Sb thin films deposited by oblique angle deposition Applied Surface Science. ,vol. 256, pp. 1636- 1640 ,(2010) , 10.1016/J.APSUSC.2009.09.084
V. Senthilkumar, P. Vickraman, J. Joseph Prince, M. Jayachandran, C. Sanjeeviraja, Effects of annealing temperature on structural, optical, and electrical properties of antimony-doped tin oxide thin films Philosophical Magazine Letters. ,vol. 90, pp. 337- 347 ,(2010) , 10.1080/09500831003662529
Tadatsugu Minami, Transparent conducting oxide semiconductors for transparent electrodes Semiconductor Science and Technology. ,vol. 20, ,(2005) , 10.1088/0268-1242/20/4/004
Hamid Reza Fallah, Mohsen Ghasemi, Ali Hassanzadeh, Hadi Steki, The effect of annealing on structural, electrical and optical properties of nanostructured ITO films prepared by e-beam evaporation Materials Research Bulletin. ,vol. 42, pp. 487- 496 ,(2007) , 10.1016/J.MATERRESBULL.2006.06.024
A.L. Unaogu, C.E. Okeke, Characterization of antimony-doped tin oxide films prepared by spray pyrolysis Solar Energy Materials. ,vol. 20, pp. 29- 36 ,(1990) , 10.1016/0165-1633(90)90014-R
Donhang Liu, Q Wang, HLM Chang, Haydn Chen, None, Variant structure in metal-organic-chemical-vapor-deposition-derived SnO2 thin films on sapphire (0001) Journal of Materials Research. ,vol. 10, pp. 1516- 1522 ,(1995) , 10.1557/JMR.1995.1516