作者: JW Leem , JS Yu , None
DOI: 10.1016/J.MSEB.2011.06.015
关键词: Scanning electron microscope 、 Refractive index 、 Electrode 、 Annealing (metallurgy) 、 Tin oxide 、 Optics 、 Electrical resistivity and conductivity 、 Doping 、 Optoelectronics 、 Crystallinity 、 Materials science
摘要: Abstract We have investigated the optical and electrical characteristics of antimony (Sb)-doped tin oxide (SnO 2 ) films with modified structures by thermal annealing as a transparent conductive electrode. The structural properties were analyzed from relative void % spectroscopic ellipsometry well scanning electron microscopy images X-ray diffraction patterns. As temperature was raised, Sb-doped SnO exhibited slightly enhanced crystallinity increase grain size 17.1 nm at 500 °C to 34.3 nm 700 °C. Furthermore, refractive index extinction coefficient gradually decreased due in within film during annealing. resistivity 8.2 × 10 −3 Ω cm 500 °C, but it increased rapidly After annealing, transmittance significantly increased. For photovoltaic applications, photonic flux density figure merit over entire solar spectrum obtained, indicating highest values 5.4 × 10 14 cm −2 s −1 nm 1.85 eV after 700 °C 340.1 μA cm Ω respectively.