Effects of annealing temperature on structural, optical, and electrical properties of antimony-doped tin oxide thin films
作者： V. Senthilkumar , P. Vickraman , J. Joseph Prince , M. Jayachandran , C. Sanjeeviraja
DOI: 10.1080/09500831003662529
关键词:
摘要: Antimony-doped tin oxide (ATO) films, approximately 320 nm in thickness, have been prepared by electron beam evaporation onto glass substrates. The films were annealed at temperatures between 400°C and 550°C air their structure surface morphologies observed X-ray diffraction (XRD) atomic force microscopy (AFM) after the different annealing treatments. XRD patterns of ATO thin as-deposited showed that they amorphous, but beyond caused to become polycrystalline with tetragonal orientated (1 1 0) direction. grain size obtained from analysis, was range 146–256 A this increased temperature. dislocation density, cell volume strain found decrease gradually increasing Photoluminescence spectra revealed an intensive blue/violet peak 420 nm, which height annealing. It is s...
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