Surface morphologies and electrical properties of antimony-doped tin oxide films deposited by plasma-enhanced chemical vapor deposition

摘要: Antimony-doped tin oxide (ATO) films were deposited on Corning glass 1737 substrates by a plasma-enhanced chemical vapor deposition (PE-CVD) technique using gas mixture of SnCl4–SbCl5–O2–Ar. Electrical properties and surface morphologies these studied varying the temperature, input ratio, R[=(PSbCl5/PSnCl4)], RF power. The PE-CVD method effectively enhanced rate also improved roughness deposit compared with thermal CVD. antimony doped which had relatively good electrical obtained at temperature 450°C, an ratio R=1.12, power 30 W. In addition, studies morphological development AFM analysis suggested that higher lower led to decrease in films.