Use of tertiarybutylarsine for GaAs growth
作者： C. H. Chen , C. A. Larsen , G. B. Stringfellow
DOI: 10.1063/1.97666
关键词: Analytical chemistry 、 Trimethylgallium 、 Epitaxy 、 Vapor pressure 、 Mineralogy 、 Crystal growth 、 Chemical vapor deposition 、 Photoluminescence 、 Thin film 、 Chemistry 、 Torr
摘要: The use of AsH 3 in the organometallic vapor phase epitaxial (OMVPE) growth of GaAs and other As containing III/V semiconductors has a number of disadvantages, including toxicity …
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