Silicon carbide for microelectromechanical systems
作者： M. Mehregany , C.A. Zorman , S. Roy , A.J. Fleischman , N. Rajan
DOI: 10.1179/095066000101528322
关键词: Surface micromachining 、 Micro-Opto-Electro-Mechanical Systems 、 Silicon carbide 、 Fabrication 、 Nanotechnology 、 Microelectromechanical systems 、 Wide-bandgap semiconductor 、 Materials science 、 Carbide 、 Silicon 、 Mechanical engineering 、 Materials Chemistry 、 Mechanics of Materials 、 Metals and Alloys
摘要: AbstractSilicon carbide (SiC) has recently attracted attention as a wide bandgap semiconductor with great potential for microelectromechanical systems (MEMS). SiC exhibits excellent electrical, mechanical, and chemical properties, making it well suited harsh environment applications where traditional MEMS are constrained by the physical limitations of silicon (Si). This paper reviews material deposition techniques, micromachining processes, other issues regarding fabrication SiC-based sensors actuators. Special emphasis is placed on properties that make attractive MEMS, Si-based processing techniques have been adapted to realise structures devices. An introduction provided readers not familiar techniques.
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