Single-Source Chemical Vapor Deposition of 3 C SiC Films in a LPCVD Reactor I. Growth, Structure, and Chemical Characterization
作者： Muthu B. J. Wijesundara , Gianluca Valente , William R. Ashurst , Roger T. Howe , Albert P. Pisano
DOI: 10.1149/1.1646141
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摘要: We report the deposition of 3C-SiC films on an Si(100) substrate from 1,3-disilabutane precursor molecule utilizing a conventional low-pressure chemical vapor (CVD) system. The chemical, structural, and growth properties resulting are investigated as functions temperature flow rates. Based X-ray photoelectron spectroscopy, deposited at temperatures low 650°C indeed carbidic. diffraction analysis indicates to be amorphous up 750°C, above which they become polycrystalline. effect process parameters film uniformity is also reported. Highly uniform achieved 800°C lower, essentially independent rate.
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