Electrical Characterization of n-Type Polycrystalline 3C-Silicon Carbide Thin Films Deposited by 1,3-Disilabutane
作者： Jingchun Zhang , Roger T. Howe , Roya Maboudian
DOI: 10.1149/1.2188327
关键词:
摘要: X-ray diffraction, Hall effect probe, and four-point probe were used to characterize the n-type doping of polycrystalline 3C-SiC (poly-SiC) thin films. The films deposited at 800°C on SiO 2 -isolated Si(100) substrates by low-pressure chemical vapor deposition using 1,3-disilabutane single precursor ammonia. Resistivity values as low 30 mft cm achieved. A shrinkage in SiC lattice constant from 4.360 4.345 was observed upon doping. carrier concentration increased with 9.2 X 10 15 6.8 × 17 -3 , while mobility decreased 2063 400 /V s. temperature coefficient resistivity characterized range 304-638 K magnitude -2.4 - 1.3% -1 for undoped -0.17 0.10% most conductive samples. crystalline quality, mobility, energy barrier height grain boundaries are discussed correlated variation
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