An analytic approximation with a wide range of applicability for band-to-band radiative transition rates in direct, narrow-gap semiconductors

摘要: Good approximations for the radiative transition rates, conduction band to heavy-hole and light-hole band, which are continuous over a wide range of temperature electron hole Fermi levels (degenerate non-degenerate) in photon multiplication may be included, developed direct gap III - V semiconductors. They based on structure wavefunctions simple isotropic three-band approximation Kane's depend solely effective masses at zone centre, energy dielectric constant. compared with more accurate calculations diagonalization matrix four-band model higher lower bands taken into account by perturbation theory. Application (0.0 < x 0.25) (0.17 0.26) shows that whole materials, (-0.25 0.40 eV) temperatures (80 400 K) agreement is never worse than 20% usually considerably better. Results given detail InSb . It also shown degenerate material, when penetration level valence greater rate can exceed band. These eminently suitable use modelling semiconductor effects devices.